张耿鸿1，2，， 朱佳1，2，， 姜格蕾1，2，， 王彪1，2，3，， 郑跃1，2，*
（ 1、中山大学物理科学与工程技术学院，微纳物理力学实验室，广州 510275； 2、中山大学光电材料与技术国家重点实验室，广州 510275； 3、中山大学中法核工程与技术学院，珠海 519082； ）
职称论文发表摘要： 电子器件可控性研究在追求器件智能化和可控化日益迫切的当今社会至关重要。基于第一性原理和量子输运计算，本文研究了压缩应变载荷对GaN隧道结基态电学性质和电流输运的影响，从中在原子尺度上窥视了GaN隧道结的微观压电性，验证了其内在的巨压电电阻(GPR)效应。计算结果表明，压缩应变载荷可以调节隧道结内GaN势垒层的电势能降、内建电场、电荷密度和极化强度，进而实现对隧道结电流输运和隧穿电阻的调控。在－1.0V的偏置电压下，－5%的应变载荷将使GaN隧道结的隧穿电阻增至4倍。本研究展现了GaN隧道结在可控电子器件中的应用潜力，也展现了应变工程在调控电子器件性能方面的光明前景。?????
关键词： 应变调控；GaN隧道结；微观压电性；巨压电电阻效应
ZHANG Genghong1,， ZHU Jia2,， JIANG Gelei1,， WANG Biao2,， ZHENG Yue1,*
（ 1、Micro-Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275； 2、State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275； ）
Abstract： It is an urgent and significant issue to investigate and exploit tunable electronic devices nowadays. Basing on first principles and quantum transport calculations, the effect of compressive strain on the current transport and relative electrical properties in gallium nitride (GaN) tunnel junctions has been investigated. Meanwhile, we also peep at the microscopy piezoelectricity of the junction at atomic scale and verify its intrinsic giant piezoelectric resistance (GPR) effect. Results show that the potential energy drop, built-in electric field, charge density and polarization of the GaN barrier in the tunnel junction can be adjusted by compressive strain. Accordingly, it is interesting to see that the current transport and the tunneling resistance can be tuned by the applied strain. At a bias voltage of －1.0V, an increase of up to 4 times of the tunneling resistance can be obtained by a －5% compressive strain. This study exhibits the application potential of GaN tunnel junctions in tunable electronic devices and also implies the promising prospect of strain engineering in the field of exploiting tunable devices.?????
Keywords： strain regulation; GaN tunnel junctions; atomic scale piezoelectricity; giant piezoelectric resistance effect
作者简介： 张耿鸿（1984-），男，博士后，助理研究员，主要研究方向：基于第一性原理的微纳尺度功能材料及其器件物理性能调控
通信联系人： 郑跃（1978-），男，教授，主要研究方向：微纳尺度功能材料性能调控与应用研究
中国科技论文在线：张耿鸿，朱佳，姜格蕾等. 压缩应变载荷下氮化镓隧道结微观压电特性及其巨压电电阻效应[EB/OL].北京：中国科技论文在线 [2015-12-02].http://www.paper.edu.cn/releasepaper/content/201512-131.
发表期刊： 张耿鸿，朱佳，姜格蕾等. 压缩应变载荷下氮化镓隧道结微观压电特性及其巨压电电阻效应[J]. 物理学报，2016，65（10）：107701-1-107701-8.
ZHANG Genghong, ZHU Jia, JIANG Gele et al. Atomic scale piezoelectricity and giant piezoelectric resistance effect in gallium nitride tunnel junctions under compressive strain[J]. Acta Physica Sinica, 2016, 65(10): 107701-1-107701-8.
